IndiumV3, Main, Repository, bibRecord, 000034

Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement

Identifieur interne : 000034 ( Main/Repository ); précédent : 000033; suivant : 000035

Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement

Auteurs : RBID : Pascal:14-0091066

Descripteurs français

Pascal (Inist)
- Interface, Cellule solaire, Effet champ électrique, Génération harmonique optique, Génération harmonique 2, Propriété optique, Oxyde d'indium, Oxyde de zinc, Fullerènes, Diode, Electrostatique, C60, 8460J, 7866, 8105T, 8105U.

English descriptors

KwdEn :
- Diode, Electric field effect, Electrostatics, Fullerenes, Indium oxide, Interface, Optical harmonic generation, Optical properties, Second harmonic generation, Solar cell, Zinc oxide.

Abstract

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the effect of the use of bathocuproine (BCP) interface layer. The EFISHG measurements of indium-zinc-oxide (IZO)C₆₀/Al diodes showed that the BCP layer inserted between C₆₀ and Al formed an electrostatic field |E_i| = 2.5 ×10⁴ V/cm in the C₆₀ layer, pointing in a direction from the Al to the IZO. Accordingly, in the IZO/pentacene/C₆₀/BCP/Al organic solar cells (OSCs), holes (electrons) move to the IZO (Al) electrode, enhancing the short-circuit current The EFISHG measurement is capable of directly probing internal fields in the layers used for OSCs, and is helpful for studying the contribution of the interface layer in OSCs.

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Pascal:14-0091066

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement</title>
<author><name sortKey="Taguchi, Dai" uniqKey="Taguchi D">Dai Taguchi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama</s1>
<s2>Meguro-ku, Tokyo 152-8552</s2>
<s3>JPN</s3>
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<country>Japon</country>
<wicri:noRegion>Meguro-ku, Tokyo 152-8552</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sumiyoshi, Ryota" uniqKey="Sumiyoshi R">Ryota Sumiyoshi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama</s1>
<s2>Meguro-ku, Tokyo 152-8552</s2>
<s3>JPN</s3>
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<country>Japon</country>
<wicri:noRegion>Meguro-ku, Tokyo 152-8552</wicri:noRegion>
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</author>
<author><name>XIANGYU CHEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama</s1>
<s2>Meguro-ku, Tokyo 152-8552</s2>
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<wicri:noRegion>Meguro-ku, Tokyo 152-8552</wicri:noRegion>
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<author><name sortKey="Manaka, Takaaki" uniqKey="Manaka T">Takaaki Manaka</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama</s1>
<s2>Meguro-ku, Tokyo 152-8552</s2>
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<country>Japon</country>
<wicri:noRegion>Meguro-ku, Tokyo 152-8552</wicri:noRegion>
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<author><name sortKey="Iwamoto, Mitsumasa" uniqKey="Iwamoto M">Mitsumasa Iwamoto</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama</s1>
<s2>Meguro-ku, Tokyo 152-8552</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<publicationStmt><idno type="inist">14-0091066</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0091066 INIST</idno>
<idno type="RBID">Pascal:14-0091066</idno>
<idno type="wicri:Area/Main/Corpus">000048</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Diode</term>
<term>Electric field effect</term>
<term>Electrostatics</term>
<term>Fullerenes</term>
<term>Indium oxide</term>
<term>Interface</term>
<term>Optical harmonic generation</term>
<term>Optical properties</term>
<term>Second harmonic generation</term>
<term>Solar cell</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Interface</term>
<term>Cellule solaire</term>
<term>Effet champ électrique</term>
<term>Génération harmonique optique</term>
<term>Génération harmonique 2</term>
<term>Propriété optique</term>
<term>Oxyde d'indium</term>
<term>Oxyde de zinc</term>
<term>Fullerènes</term>
<term>Diode</term>
<term>Electrostatique</term>
<term>C60</term>
<term>8460J</term>
<term>7866</term>
<term>8105T</term>
<term>8105U</term>
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<front><div type="abstract" xml:lang="en">By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the effect of the use of bathocuproine (BCP) interface layer. The EFISHG measurements of indium-zinc-oxide (IZO)C<sub>60</sub>
/Al diodes showed that the BCP layer inserted between C<sub>60</sub>
 and Al formed an electrostatic field |E<sub>i</sub>
| = 2.5 ×10<sup>4</sup>
 V/cm in the C<sub>60</sub>
 layer, pointing in a direction from the Al to the IZO. Accordingly, in the IZO/pentacene/C<sub>60</sub>
/BCP/Al organic solar cells (OSCs), holes (electrons) move to the IZO (Al) electrode, enhancing the short-circuit current The EFISHG measurement is capable of directly probing internal fields in the layers used for OSCs, and is helpful for studying the contribution of the interface layer in OSCs.</div>
</front>
</TEI>
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<fA08 i1="01" i2="1" l="ENG"><s1>Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>10th International Conference on Nano-Molecular Electronics (ICNME2012)</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>TAGUCHI (Dai)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SUMIYOSHI (Ryota)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>XIANGYU CHEN</s1>
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<fA11 i1="04" i2="1"><s1>MANAKA (Takaaki)</s1>
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<fA11 i1="05" i2="1"><s1>IWAMOTO (Mitsumasa)</s1>
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<fA12 i1="01" i2="1"><s1>ONODA (Mitsuyoshi)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>IWAMOTO (Mitsumasa)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>OTOMO (Akira)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama</s1>
<s2>Meguro-ku, Tokyo 152-8552</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA15 i1="01"><s1>University of Hyogo</s1>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Tokyo Institute of Technology</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>National Institute of Information and Communications Technology</s1>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>National Institute of Information and Communications Technology (NICT)</s1>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the effect of the use of bathocuproine (BCP) interface layer. The EFISHG measurements of indium-zinc-oxide (IZO)C<sub>60</sub>
/Al diodes showed that the BCP layer inserted between C<sub>60</sub>
 and Al formed an electrostatic field |E<sub>i</sub>
| = 2.5 ×10<sup>4</sup>
 V/cm in the C<sub>60</sub>
 layer, pointing in a direction from the Al to the IZO. Accordingly, in the IZO/pentacene/C<sub>60</sub>
/BCP/Al organic solar cells (OSCs), holes (electrons) move to the IZO (Al) electrode, enhancing the short-circuit current The EFISHG measurement is capable of directly probing internal fields in the layers used for OSCs, and is helpful for studying the contribution of the interface layer in OSCs.</s0>
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<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05T</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>07</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>C60</s0>
<s4>INC</s4>
<s5>46</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="14" i2="X" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>8105T</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>8105U</s0>
<s4>INC</s4>
<s5>74</s5>
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<fN21><s1>125</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICNME2012 International Conference on Nano-Molecular Electronics</s1>
<s2>10</s2>
<s3>Awaji JPN</s3>
<s4>2012-12-12</s4>
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Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement

Study of interface layer effect in organic solar cells by electric-field-induced optical second-harmonic generation measurement

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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